In another embodiment the carboxylic acids are present in an amount between about 0. When the pH is too low, the presence of highly corrosive oxidants e. The formulations of the invention are also useful, for example, for polishing silica, tantalum, tantalum nitride, tantalum aluminum nitride, and the like. The first approach uses a single phase slurry. The conditions were similar to those described above, that is, the process involves applying 5 psi down force pressure, 0 psi back pressure, 60 rpm table speed Adding an additional 0. Hence, one advantage of hydroxylamine nitrate over the known prior art is that it has better removal rate controllability as compared with hydrogen peroxide.
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Further reducing the Ammonium persulfate concentration, however, reduced the polishing rate. Sodium perborate, however, performed poorly, as did sodium hypochlorite. Copper has an even lower resistivity than aluminum, and significantly higher electromigration resistance.
While the data showed considerable variation, lower concentrations of oxidizer relative to the abrasive reduced the polishing rates. A–0205a, good nonuniformity values are below five percent. The citric acid of oxidizer F is preferably between about 0.
Aug 15, Inventors: Hence, one advantage of Hydroxylamine nitrate over the known prior is that it has better removal rate controllability as compared with Hydrogen Peroxide. a-0205aa
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At pH 8, however, the polishing rate was Angstroms per minute. To post a comment you must log in. The process of claim 40 wherein the secondary oxidizer comprises potassium peroxymonosulfate, imidazole, malonic acid, potassium iodate, potassium periodate, lithium periodate, or malonamide, periodic acid, oxalic acid, and wherein the second material is a dielectric material.
For tungsten substrates, the pH may be adjusted to a range of between about logiyech to 12, and preferably between about 3 to 9, more preferably between 7 and 8. The sulfuric acid of oxidizer F is preferably between about 1 to 5 wt.
This compares to about 75 Angstroms per minute without citric acid. The concentration of particles in the kogitech slurry may be widely varied in the broad practice of the present invention, depending on the specific application or results.
The process of claim 25 wherein the chemical mechanical polishing composition comprises hydrogen peroxide, a perborate, a peroxhydrate, or a urea hydrogen peroxide complex.
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Thus, the present invention plays a balance between HAN and Hydroxylamine sulfate to obtain peak performance, i. A composition for chemical mechanical polishing that includes a slurry is described. The hydroxylamine nitrate solution of oxidizer B is preferably between about 0.
A method for chemical mechanical polishing of copper comprising: The process of claim 33 wherein the chemical mechanical polishing composition comprises at least one of potassium iodate, potassium periodate, or lithium periodate. The present invention is directed to a chemical mechanical planarization or polishing slurry that is able logitechh selectively polish the conductive and dielectric portion of a logitecn layer.
The process of claim 9 further comprising a second polishing operation comprising the steps of:. A method for chemical mechanical polishing is described which includes applying a slurry that includes the composition to a surface to produce mechanical removal of the metal and dielectric material. Typically, abrasive is present in the final composition in an amount ranging from about 0.
Typically, between about 0. The abrasive material may be of a single type or may comprise mixtures of different abrasive components.
Germano Walter Magazzino
The sulfuric acid of oxidizer E is preferably between about 1 to 5 wt. Martin Pool mbp wrote on Sulfuric additionally acid provides a way of modifying the pH of the oxidizer so that the hydroxylamine chemistries are on the acidic side and are therefore oxidizers. The process of claim 25 wherein the chemical mechanical polishing composition comprises at least one of potassium iodate, potassium pogitech, or lithium periodate.
Ozone, which may be produced and then solubilized into the CMP formulation or contacted with the substrate as a separate phase i. It is another object of the invention to provide one or more CMP slurry compositions that demonstrate good selectivity q-0205a the conductive layer and barrier layer while providing good nonuniformity values.
Chemical mechanical polishing compositions
You are not directly subscribed to this bug’s notifications. One excellent secondary oxidizer is imidazole. Also, at too high a pH Si—Si logiteech may form through a condensation process.
This process may be altered using the same slurry to acquire different CMP Results.